BFP540 |
RFQ for BFP540 |
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| Technical/Catalog Information | BFP540FESDE6327 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | 30GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.4dB @ 1.8GHz |
| Current - Collector (Ic) (Max) | 80mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 3.5V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| Gain | 16dB |
| Power - Max | 250mW |
| Compression Point (P1dB) | 11dBm |
| Package / Case | TSFP-4 |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BFP540FESDE6327 BFP540FESDE6327 BFP540FESDE6327INTR ND BFP540FESDE6327INTRND BFP540FESDE6327INTR |
| Product | Manufacturers | Pack | D/C |
| BFP540 | - | SOT343 | 06+ |
Features |
| • For highest gain low noise amplifier at 1.8 GHz• Outstanding Gms = 21 dB Noise Figure F = 0.9 dB• Gold metallization for high reliability• SIEGET 45 - Line |
| Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCEO |
4.5 |
V |
| Collector-emitter voltage |
VCES |
14 | |
| Collector-base voltage |
VCBO |
14 | |
| Emitter-base voltage |
VEBO |
1 | |
| Collector current |
IC |
80 |
mA |
| Base current |
IB |
8 | |
| Total power dissipation1) TS 77°C |
Ptot |
250 |
W |
| Junction temperature |
Tj |
150 |
°C |
| Ambient temperature |
TA |
-65 ... 150 | |
| Storage temperature |
Tstg |
-65 ... 150 | |
| Thermal Resistance | |||
| Parameter |
Symbol |
Value |
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